Authorship：Lead author,　Corresponding author   Language：English   Publishing type：Research paper (scientific journal)   Publisher：PHYSICAL SOC JAPAN  

A Si(110)-16 x 2 single-domain (SD) surface is investigated in a site-selective way using Si L23VV Auger-electron Si-2p photoelectron coincidence spectroscopy (Si-L23VV-Si-2p APECS) and Si-2p photoelectron Si-L23VV Auger-electron coincidence spectroscopy (Si-2p-Si-L23VV PEACS). The Si(110)-16 x 2 SD consists of five Si-2p surface components (SC1-SC5) and has four semiconducting surface states (S-1-S-4). The Si-L2VV-Si-2p(1/2) APECS spectrum of the Si(110)-16 x 2 SD measured in coincidence with Si-2p(1/2) photoelectrons of SC3, SC4, and SC5 shows two small shoulders in the higher Auger electron kinetic energy (AeKE) region. These shoulders suggest Auger processes involving the surface states S-1 and S-3. The spectral weights of SC3, SC4, and SC5 Si-2p components are greatly enhanced in the Si-2p-Si-L23VV PEACS spectrum measured at Auger electrons with an AeKE of +5.0 eV relative to the Si L23VV peak. On the other hand, the spectral weights of SC1 and SC2 Si-2p components in the Si-2p-Si-L23VV PEACS spectrum show a maximum peak at a relative AeKE of +3 eV. These results directly support the correlations between the five surface components (SC1-SC5) and four surface states (S-1-S-4) in the adatom-buckling model for the Si(110)-16 x 2 SD proposed by Sakamoto et al.

DOI： 10.7566/JPSJ.86.054704

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Language：English   Publishing type：Research paper (scientific journal)   Publisher：AMER CHEMICAL SOC  

Site-specific electron relaxations caused by Si:2p core-level photoionizations in F3SiCH2CH2Si(CH3)(3) and Cl3SiCH2CH2Si(CH3)(3) vapors have been studied by means of the photoelectron Auger electron coincidence spectroscopy. F3SiCH2CH2Si(CH3)3 shows almost 100% site-specificity in fragmentation-caused by the Si:2p ionization. However, substitution of Cl for F of F3SiCH2CH2Si(CH3)(3) considerably reduces the site-specificity at the Si atom bonded to three halogen atoms, with the site-specificity at the Si site bonded to three methyl groups remaining largely unchanged. The site specificity reduction in Cl3SiCH2CH2Si(CH3)(3) is considered to take place during the transient period between Si:L23VV Auger electron emission and the subsequent fragmentation. The reason for the reduction can be explained in terms of some differences between these two molecules in the L23VV Auger decay at the Si site bonded to the three halogen atoms.

DOI： 10.1021/acs.jpca.6b09399

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Authorship：Lead author,　Corresponding author   Language：English   Publishing type：Research paper (scientific journal)   Publisher：PHYSICAL SOC JAPAN  

The local valence electronic states of Si3N4 films grown on Si(111)-7 x 7 [Si3N4/Si(111)] have been investigated by coincidence spectroscopy. The Si L23VV Auger electron spectra (AES) measured in coincidence with the Sin+ 2p photoelectrons of beta-Si3N4(0001)/Si(111)-8 x 8 indicate that the binding energy of the local valence electronic state at Sin+ increases as n increases. Si4+ L23VV AES measured as a function of the beta-Si3N4(0001) thickness show that the binding energy at the valence-band maximum (BEVBM) of beta-Si3N4(0001) decreases by 1.6 +/- 0.5 eV as the Si3N4 thickness decreases from 3.6 to 0.7 angstrom. The large decrease is attributed to the hybridization of the valence electronic state of Si3N4 with those of neighboring subnitrides and to the formation of beta-Si3N4(0001) islands. The BEVBM value of the 3.6-angstrom-Si3N4/Si(111)-quadruplet decreases by 0.7 +/- 0.6 eV from that of 3.6-angstrom-beta-Si3N4(0001)/Si(111)-8 x 8. The decrease in BEVBM is attributed to the different interface structures.

DOI： 10.7566/JPSJ.84.044711

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Language：English   Publishing type：Research paper (scientific journal)   Publisher：PHYSICAL SOC JAPAN  

Decay processes of Si 2s core holes in a clean Si(111)-7 x 7 surface are investigated using coincidence measurements of Si Auger electrons and Si 2s photoelectrons at a photon energy of 180 eV. We show that Si 2s core holes exhibit two nonradiative decay processes: the first being a Si L1L23V Coster-Kronig transition followed by delocalization of the valence hole and Si L23VV Auger decay, and the second being Si L1VV Auger decay. The branching ratio of the Si L1L23V Coster-Kronig transition to the Si L1VV Auger decay is estimated to be 96.7% +/- 0.4% to 3.2% +/- 0.4%.

DOI： 10.7566/JPSJ.83.094704

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Authorship：Lead author,　Corresponding author   Language：Japanese   Publishing type：Research paper (scientific journal)   Publisher：日本分析化学会  

CiNii Books

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Language：English   Publishing type：Research paper (scientific journal)   Publisher：ELSEVIER SCIENCE BV  

Ion desorption from condensed F3SiCD2CH2Si(CH3)(3) induced by Si-2p core-level ionizations of the F3Si- and the -Si(CH3)(3) sites (Si[F] and Si[Me]) was investigated using photoelectron photoion coincidence (PEPICO) spectroscopy, Auger photoelectron coincidence spectroscopy (APECS) and Auger electron photoion coincidence (AEPICO) spectroscopy. A Si-2p-F+ PEPICO peak appeared selectively in the Si[F]-2p region. Si-2p-H+ PEPICO peaks were, on the other hand, observed in both the Si[Me]- and Si[F]-2p regions. The structure of the Si-L23VV-Si[F]-2p Auger photoelectron coincidence spectrum (APECS) was quite different from that of the Si-L23VV-Si[Me]-2p APECS. Ab initio molecular orbital calculations qualitatively reproduced the measured APECSs. The peak positions in the Si-L23VV-F+ AEPICO spectrum were in good agreement with those in the Si-L23VV-Si[F]-2p APECS. The Si-L23VV-H+ AEPICO spectrum, on the other hand, showed no characteristic peaks. Based on these results we have concluded that the site-specific F+ desorption is stimulated by Si [F]-L23VV Auger processes, and that both the Si[Me]- and Si[F]-L23VV Auger decays are responsible for the non-site-specific H+ desorption. (c) 2012 Elsevier B.V. All rights reserved.

DOI： 10.1016/j.susc.2012.09.003

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We constructed two types of coincidence analyzers those can be used for Auger photoelectron coincidence spectroscopy and electron ion coincidence spectroscopy. The first one is designed for high electron energy resolution measurements, and consists of a double-pass coaxially symmetric mirror electron energy analyzer (DP-ASMA), a double-pass cylindrical mirror electron energy analyzer (DP-CMA), a time-of-flight ion mass spectrometer (TOF-MS), a magnetic shield, a conflat flange, an xyz stage, and a tilt adjustment mechanism. The second one is dedicated for high sensitivity measurements, and involves an ASMA with a large pinhole, DP-CMA with a large pinhole, and a TOF-MS.

DOI： 10.3131/jvsj2.56.507

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Authorship：Lead author,　Corresponding author   Language：English   Publishing type：Research paper (scientific journal)   Publisher：PHYSICAL SOC JAPAN  

To clarify the factors governing the local valence electronic states of SiO2 ultrathin films, we have measured the Si-L23VV-Sin+-2p Auger-electron photoelectron coincidence spectra (n = 0, 1, 2, 3, 4, where n represents the number of oxygen atoms bonded to Si) of SiO2 thermally grown on a Si(111)-7 x 7 surface [SiO2/Si(111)]. The results indicate that the valence electronic states in the vicinity of the Sin+ sites shift to deeper binding energies as n increases. Furthermore, Si4+-L23VV Auger electron spectra, measured as a function of SiO2 thickness, taken in coincidence with Si4+-2p photoelectron emission show that the valence-band maximum (VBM) of the SiO2 layer shifts by 2.7 +/- 1.0 eV toward the Fermi level when SiO2 thickness is decreased to approximate to 1 monolayer (ML). This upward shift is much larger than that for a SiO2 layer with a thickness of approximate to 1 ML thermally grown on Si(100)-2 x 1 (about 1.6 eV). We attribute the large shift in the VBM of SiO2/Si(111) with a 1-ML-thick SiO2 layer to the formation of SiO2 islands on the 7 x 7 structure and to the presence of Si1+ atoms adjacent to the SiO2 sites.

DOI： 10.1143/JPSJ.81.074706

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Authorship：Lead author,　Corresponding author   Language：English   Publishing type：Research paper (scientific journal)   Publisher：PHYSICAL SOC JAPAN  

The local valence electronic states of the surface, interface, and substrate for SiO2 ultrathin films thermally grown on a Si(100)-2x1 have been investigated using Si-L23VV Auger-electron Sin+-2p photoelectron coincidence spectroscopy (n represents the number of oxygen atoms bonded to the Si). A series of Si-L23VV Auger electron spectra (AES) measured in coincidence with Sin+-2p photoelectron indicate that the valence electronic states in the vicinity of the Sin+ sites shift to the deeper binding-energy side as n increases. Furthermore, the Si4+-L23VV AES measured as a function of the thickness of the SiO2, show that the valence-band maximum of SiO2 shifts similar to 1.6 eV toward the Fermi level when the thickness of the SiO2 film is decreased to 1.7-1.5 angstrom. This shift is attributed to a decrease in the number of Si4+ and an increase in the number of Si3+, Si2+, Si1+, and Si-0 in the vicinity of the topmost SiO2 layer.

DOI： 10.1143/JPSJ.80.084703

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Language：English   Publishing type：Research paper (scientific journal)   Publisher：AMER CHEMICAL SOC  

In an aim to create a "sharp" molecular knife, we have studied site-specific fragmentation caused by Si:2p core photoionization of bridged trihalosilyltrimethylsilyl molecules in the vapor phase. Highly site-specific bond dissociation has been found to occur around the core-ionized Si site in some of the molecules studied. The site specificity in fragmentation and the 2p binding energy difference between the two Si sites depend in similar ways on the intersite bridge and the electro-negativities of the included halogen atoms. The present experimental and computational results show that for efficient "cutting" the following conditions for the two atomic sites to be separated by the knife should be satisfied. First, the sites should be located far from each other and connected by a chain of saturated bonds so that intersite electron migration can be reduced. Second, the chemical environments of the atomic sites should be as different as possible.

DOI： 10.1021/jp203664r

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DOI： 10.1103/PhysRevB.83.035320

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Authorship：Lead author,　Corresponding author   Language：English   Publisher：AMER PHYSICAL SOC  

Valence electronic states of a clean Si(111)-7x7 surface are investigated in a surface-site-selective way using high-resolution coincidence measurements of Si L23VV Auger electrons and Si 2p photoelectrons. The Si L23VV Auger electron spectra measured in coincidence with energy-selected Si 2p photoelectrons show that the valence band at the highest density of states in the vicinity of the rest atoms is shifted by similar to 0.95 eV toward the Fermi level (E-F) relative to that in the vicinity of the pedestal atoms (atoms directly bonded to the adatoms). The valence-band maximum in the vicinity of the rest atoms, on the other hand, is shown to be shifted by similar to 0.53 eV toward E-F relative to that in the vicinity of the pedestal atoms. The Si 2p photoelectron spectra of Si(111)-7x7 measured in coincidence with energy-selected Si L23VV Auger electrons identify the topmost surface components, and suggest that the dimers and the rest atoms are negatively charged while the pedestal atoms are positively charged. Furthermore, the Si 2p-Si L23VV photoelectron Auger coincidence spectroscopy directly verifies that the adatom Si 2p component (usually denoted by C-3) is correlated with the surface state just below E-F (usually denoted by S-1), as has been observed in previous angle-resolved photoelectron spectroscopy studies.

DOI： 10.1103/PhysRevB.83.035320

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Authorship：Lead author,　Corresponding author   Language：English   Publishing type：Research paper (scientific journal)   Publisher：PHYSICAL SOC JAPAN  

Valence electronic structures of a clean Si(100)-2x1 surface are investigated in a surface-site-selective way using Si-L23VV Auger electron-Si-2p photoelectron coincidence spectroscopy. The Si-L23VV Auger electron spectra measured in coincidence with Si-2p photoelectrons emitted from the Si up-atoms or Si 2nd-layer of Si(100)-2x1 suggest that the position where the highest density of valence electronic states located in the vicinity of the Si up-atoms is shifted by 0.8 eV towards lower binding energy relative to that in the vicinity of the Si 2nd-layer. Furthermore, the valence band maximum in the vicinity of the Si up-atoms is indicated to be shifted by 0.1 eV towards lower binding energy relative to that in the vicinity of the Si 2nd-layer. These results are direct evidence of the transfer of negative charge from the Si 2nd-layer to the Si up-atoms.

DOI： 10.1143/JPSJ.79.064714

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Authorship：Lead author,　Corresponding author   Language：English   Publishing type：Research paper (scientific journal)   Publisher：ELSEVIER SCIENCE BV  

Topmost-surface-sensitive Si-2p photoelectron spectra of a clean Si(1 0 0)-2 x 1 surface have been measured using Si-2p photoelectron Si-L(23)VV Auger coincidence spectroscopy (Si-2p-Si-L(23)VV PEACS). The escape depth of the PEACS electrons is estimated to be similar to 1.2 angstrom. The results support the assignments of the Si up-atoms, the Si down-atoms, the Si 2nd-layer, and the Si bulk proposed in previous researches. The Si-2p component with a binding energy of -0.23 eV relative to the bulk Si-2p(3/2) peak, is shown to originate mainly from the topmost surface. Site selectivity of PEACS is indicated to be achieved to some degree by carefully selecting the kinetic energy of the Auger electrons. Since PEACS can be applied to any surface, the present study opens a new approach to identify PES components. (C) 2010 Elsevier B.V. All rights reserved.

DOI： 10.1016/j.susc.2010.02.005

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In order to get insight into the mechanism of structural change in tetrahedral amorphous carbon (ta-C) films that is induced by soft X-ray illumination at photon energies near the carbon core edge, the desorption of ions from ta-C films, as a possible process taking place concurrently with the photo-induced restructuring, was studied by time-of-flight (TOF) measurements of photo-ions as a function of photon energy. The results show that (1) the main ions detected are H(+), (2) the desorption efficiency spectra exhibit a resonant peak at 286-287 eV which is common to all detected ions, and (3) is 3 eV lower than the resonant peak in the efficiency spectrum of photo-induced restructuring. These rule out the hypothesis that it is the photo-induced C-H bond rupture that causes the resonant soft X-ray-induced restructuring in ta-C films. (C) 2009 Elsevier B.V. All rights reserved.

DOI： 10.1016/j.nimb.2009.10.172

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Language：English   Publishing type：Research paper (scientific journal)   Publisher：IOP PUBLISHING LTD  

We have investigated ion desorption from single-walled carbon nanotubes (SWNTs) that is induced by soft X-ray illumination in the C 1s core-excitation energy range in order to have insight to the mechanism of defect formation caused by the similar excitation. The mass of desorbed ions was analyzed by a time-of-flight (TOF) spectrometer and the photon energy dependence of the ion yield or the desorption efficiency spectra were measured as a function of the monochromatic photon energy used for illumination. Experimental results exclude the simple detachment of carbon atoms constituting the nanotubes from the cause of the defect formation. Also the photo-induced etching of carbon atoms associated with C-H bond rupture is ruled out from the defect formation mechanism. Auger mechanisms to explain the photo-induced desorption are discussed. (C) 2010 The Japan Society of Applied Physics

DOI： 10.1143/JJAP.49.105104

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A study on Auger-electron spectra of F3SiCH2CH2Si(CH3)(3) was performed by using monochromatized synchrotron radiation. The normal Si:L23VV Auger-electron spectrum was measured in the vapor phase and characterized through the ab initio molecular orbital calculation. The cascade Si:L23VV Auger-electron spectra were also obtained by L-23-holes creation through Si:KL23L23 Auger transitions after Si:1s photoexcitation in the vapor phase or its photoelectron emission in the condensed phase. Further the C:KVV and F:KVV Auger-electron spectra were measured and discussed in comparison with those of some related molecules. (C) 2009 Elsevier B.V. All rights reserved.

DOI： 10.1016/j.elspec.2009.06.006

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Language：Japanese   Publisher：THE VITAMIN SOCIETY OF JAPAN  

Recent studies on the kinetics of the regeneration reactions of vitamin E in solutions by means of stopped-flow spectroscopy confirmed that the quantum effect often plays an important role. Vitamin E may inhibit the autooxidation of lipids in cellular membranes by taking advantage of proton tunneling. It is interesting that the microscopic quantum-mechanical tunneling effect manifests itself in a macroscopic vital function. Although this finding is in conflict with our intuition at first glance, living cells might, in reality, know quantum mechanics very well and use them effectively.

DOI： 10.20632/vso.83.9_521

CiNii Books

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Authorship：Lead author   Language：English   Publishing type：Research paper (scientific journal)   Publisher：CHEMICAL SOC JAPAN  

A study of the kinetics of the proton-transfer reaction in flavonoid in ethanol solution by means of stopped-flow spectroscopy indicated that proton tunneling plays an important role in the antioxidant reaction.

DOI： 10.1246/bcsj.82.216

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Authorship：Lead author,　Corresponding author   Language：Japanese   Publishing type：Research paper (scientific journal)   Publisher：Vacuum Society of Japan  

We have developed an electron electron ion coincidence (EEICO) apparatus for high-resolution Auger photoelectron coincidence spectroscopy (APECS) and electron ion coincidence (EICO) spectroscopy. It consists of a coaxially symmetric mirror electron energy analyzer (ASMA), a miniature double-pass cylindrical mirror electron energy analyzer (DP-CMA), a miniature time-of-flight ion mass spectrometer (TOF-MS), a magnetic shield, an xyz stage, a tilt-adjustment mechanism, and a conflat flange with an outer diameter of 203 mm. A sample surface was irradiated by synchrotron radiation, and emitted electrons were energy-analyzed and detected by the ASMA and the DP-CMA, while desorbed ions were mass-analyzed and detected by the TOF-MS. The performance of the new EEICO analyzer was evaluated by measuring Si 2p photoelectron spectra of clean Si(001)-2 × 1 and Si(lll)-7 × 7, and by measuring Si-Z, 23VV-Si-2p Auger photoelectron coincidence spectra (Si-L 23VV-Si-2p APECS) of clean Si(001)-2 × 1.

DOI： 10.3131/jvsj2.51.749

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Authorship：Lead author,　Corresponding author   Language：English   Publishing type：Research paper (scientific journal)   Publisher：JAPAN SOC ANALYTICAL CHEMISTRY  

We have developed a miniature electron ion coincidence (EICO) analyzer mounted on a conflat flange with an outer diameter of 114 mm. It consists of a cylindrical mirror analyzer (CMA), a time-of-flight ion mass spectrometer (TOF-MS), a commercially available linear motion feedthrough, and a tilt adjustment mechanism. Each sample surface was irradiated by synchrotron radiation, and the energies of emitted electrons were analyzed and detected by the CMA, while desorbed ions were collected by the TOF-MS in coincidence with the electrons. The performance of the EICO analyzer was tested by measuring the Auger-electron H+ photoion coincidence spectrum of condensed water at 4a(1) <-- O 1s resonance.

DOI： 10.2116/analsci.24.87

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Authorship：Lead author,　Corresponding author   Language：English   Publishing type：Research paper (scientific journal)   Publisher：ELSEVIER SCIENCE BV  

We have developed an electron electron ion coincidence (EEICO) analyzer for Auger photoelectron coincidence spectroscopy (APECS) and electron ion coincidence (EICO) spectroscopy. It consists of a coaxially symmetric mirror electron energy analyzer (coASMA), a miniature cylindrical mirror electron energy analyzer (CMA), a miniature time-of-flight ion mass spectrometer (TOF-MS), a xyz stage, a tilt-adjustment mechanism, and a conflat flange with an outer diameter of 203 mm. A sample surface is irradiated by synchrotron radiation, and emitted electrons are energy-analyzed and detected by the coASMA and the CMA, while desorbed ions are detected by the TOF-MS. The performance of the new EEICO analyzer was tested by measuring Si-LVV-Si-2p APECS data of clean Si(1 1 1)7 x 7 and Si(1 1 1)7 x 7 covered by dissociated H(2)O, and by measuring the Auger-electron photoion coincidence (AEPICO) spectra of condensed H(2)O at the 4a(1) <- O Is resonance. (c) 2007 Elsevier B.V. All rights reserved.

DOI： 10.1016/j.elspec.2007.02.018

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Language：English   Publishing type：Research paper (scientific journal)   Publisher：ELSEVIER IRELAND LTD  

The rate constant and activation energy of the regeneration reaction of natural vitamin E by vitamin C were determined with a double-mixing stopped-flow spectrophotometer. The formation of vitamin C radical was observed in the absorption spectrum. The kinetic effect of methyl substitution on the aromatic ring of vitamin E radical indicates that partial charge-transfer plays a role in the reaction. Since a substantial deuterium kinetic isotope effect was not found, the tunneling effect may not play an important role under the present experimental conditions. (c) 2007 Elsevier Ireland Ltd. All rights reserved.

DOI： 10.1016/j.chemphyslip.2006.12.001

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Language：English   Publishing type：Research paper (scientific journal)   Publisher：IOP PUBLISHING LTD  

This paper reports on recent studies of photostimulated ion desorption (PSID) using electron ion coincidence (EICO) spectroscopy combined with synchrotron radiation. H(+) desorption from H(2)O dissociatively adsorbed on Si(111) and SiO2/Si(111) surfaces (H(2)O/ Si(111) and H(2)O/SiO(2)/Si(111)) was studied for Si L-edge excitation. The Si 2p-H(+) photoelectron photoion coincidence (PEPICO) and Si 2p photoelectron spectra of H2O/ Si(111) and H2O/SiO2/Si(111) show that H(+) desorption probability increases as the number of positive charges at the Si site increases. The H+ desorption probability per Si 2p ionization for the Si(4+) site was estimated and found to be 5-7 x 10(-5). We proposed a mechanism that H+ desorption is induced by Si 2p photoionization accompanied by a Si LVVV double-Auger transition. This article also reviews recent EICO work on site-specific ion desorption of 1,1,1, trifluoro-2-propanol-d1 (CF(3)CD(OH)CH(3)) adsorbed on Si(100) surfaces, and on themechanisms of PSID of poly( tetrafluoroethylene) (PTFE) and TiO(2)(110). Clear site-specific ion desorption was observed for the C 1s core excitation of a CF(3)CD(OH)CH(3) sub-monolayer on Si(100). A spectator-Auger-stimulated ion- desorption mechanism was proposed for F(+) desorption induced by a transition from F 1s to sigma(C-F)* of PTFE. O(+) desorption induced by O 1s excitation of TiO(2)(110) was attributed mainly to three-hole final states resulting from multi-electron excitation/decay. For O(+) desorption induced by Ti core excitation of TiO(2)(110), on the other hand, charge transfer from an O 2p orbital to a Ti 3d orbital, instead of the interatomic Auger transition, was proposed to

DOI： 10.1088/0953-8984/18/30/S03

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Language：English   Publishing type：Research paper (scientific journal)   Publisher：ELSEVIER SCIENCE BV  

Ionic fragmentation caused by Si: Is photoionization of 1-trifluorosilyl-2-trimethylsilyiethane [F3SiCH2CH2 Si(CH3)(3)] vapor was studied by the energy-selected photoclectron photoion coincidence method and monochromatized synchrotron radiation. In the Is photoionization at the Si atom bonded to three F atoms, H+ exceeded the other ions in the peak height, and production of SiF3+ ion seemed to be reduced. On the other hand, the Is photoionization at the other Si atom bonded to three CH3 groups enhanced production of H+ ion with high kinetic energy. These results suggest that Si:1s photoionization causes site-specific fragmentation. (c) 2005 Elsevier B.V. All rights reserved.

DOI： 10.1016/j.cplett.2005.07.044

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Total photoabsorption cross-sections of trifluoromethyl sulfur pentafluoride, CF3SF5, were measured in the C, F and S K-shell regions by using a double ionization chamber and synchrotron radiation at the SPring-8 facility. The maximum cross sections were found to be 6.3, 5.0 and 1.1 Mb for the C, F and S K-edges, respectively. The spectral features in the F K-shell region were characterized by the photoabsorption spectra of CF4 and SF6 and those in the S K-shell region resemble the peaks of SF6. The observed peaks for CF3SF5 were tentatively assigned on the basis of a comparison with those for CF4 and SF6 measured simultaneously for references. (C) 2004 Elsevier B.V. All rights reserved.

DOI： 10.1016/j.cplett.2004.04.118

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Language：Japanese   Publisher：The Physical Society of Japan (JPS)  

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Language：English   Publishing type：Article, review, commentary, editorial, etc. (international conference proceedings)   Publisher：IOP PUBLISHING LTD  

The Si-L-23 VV Auger electron Si-2p photoelectron coincidence spectra (Si-L-23 VV-Si-2p APECS) of a hydrogenated Si(111)-1x1 surface are measured with an analyzer that is used for electron-electron and electron-ion coincidence measurements of surfaces. The Si-L-23 VV-Si-2p APECS show a sharp peak, a small shoulder, and a broad large peak at electron kinetic energies of about 85, about 80.5, and about 70 eV, respectively. The clarity of the last two peaks is lower in the Si-L-23 VV-Si-2p APECS of a clean Si(111)-7x7 surface. We attribute the three peaks to the Si-L23V3pV3p, Si-L23V3pV3s, and Si-L23V3sV3s Auger lines, respectively. The three-peak structure indicates that the local density of states of the 3s + 3p band is reduced in the case of the hydrogenated Si(111)-1x1 surface. This finding is consistent with that of a previous study on valence electronic states of hydrogenated Si(111) using ultraviolet photoemission spectroscopy.

DOI： 10.1088/1742-6596/288/1/012016

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Language：Japanese   Publisher：Vacuum Society of Japan  

We introduce a titanium dioxide (TiO2) single crystal holder with a cold trap and a heating mechanism mounted on a conflat flange with an outer diameter of 70 mm. The basic design of the TiO2 holder is the same with the holder for the silicon (Si) single crystal wafer [E. Kobayashi, A. Nambu, T. Kakiuchi, and K. Mase: Shinku, 50 (2007) 57]. A TiO2 single crystal wafer is fixed on a Si wafer, and the TiO2 is heated by the direct-current heating of the Si wafer. Using this holder we prepared clean TiO2(110)-1×1.

DOI： 10.3131/jvsj2.51.44

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Language：English   Publisher：ELSEVIER IRELAND LTD  

The rate constant and activation energy of the regeneration reaction of natural vitamin E by vitamin C were determined with a double-mixing stopped-flow spectrophotometer. The formation of vitamin C radical was observed in the absorption spectrum. The kinetic effect of methyl substitution on the aromatic ring of vitamin E radical indicates that partial charge-transfer plays a role in the reaction. Since a substantial deuterium kinetic isotope effect was not found, the tunneling effect may not play an important role under the present experimental conditions. (c) 2007 Elsevier Ireland Ltd. All rights reserved.

DOI： 10.1016/j.chemphyslip.2006.12.001

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Language：Japanese   Publisher：The Physical Society of Japan (JPS)  

CiNii Books

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Language：Japanese   Publishing type：Article, review, commentary, editorial, etc. (other)  

We introduce a silicon single crystal wafer holder with a cold trap and a direct current heating mechanism mounted on a conflat flange with an outer diameter of 70 mm. It consists of 300-ml cold trap, tantalum electrodes for direct-current heating and commercial electrical feedthroughs. A silicon single crystal with a size of 30 × 5 × 0.5 mm can be heated to &gt
1100 °C by direct heating, and can be cooled down to &lt
100 K with liquid nitrogen.

DOI： 10.3131/jvsj.50.57

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We introduce a silicon single crystal wafer holder with a cold trap and a direct current heating mechanism mounted on a conflat flange with an outer diameter of 70 mm. It consists of 300-ml cold trap, tantalum electrodes for direct-current heating and commercial electrical feedthroughs. A silicon single crystal with a size of 30 × 5 × 0.5 mm can be heated to &gt
1100 °C by direct heating, and can be cooled down to &lt
100 K with liquid nitrogen.

DOI： 10.3131/jvsj.50.57

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J-GLOBAL

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Event date： 2021.1

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Event date： 2020.11

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